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Atomic Force Microscopy Characterization of Hydrogen Terminated Silicon (100) 2x1 Reconstruction
DownloadFall 2015
Non-contact Atomic Force Microscopy (NC-AFM) is a Scanning Probe Microscopy tool offering unique non-perturbative analysis of surfaces and adsorbates at the atomic scale. AFM precisely oscillates a sharp tip above a sample. By monitoring the shift in resonance frequency of a quartz tuning fork...
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Spring 2020
On a perfect hydrogen-terminated Si(100)-2x1 surface, each surface silicon atom is capped with exactly one atom of hydrogen. When one of the capping hydrogen atoms is removed, the now unsatisfied orbital of the underlying silicon atom is exposed at that site. This site is better known as a...
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Spring 2016
This thesis explores the dynamics and sensing performance of silicon quantum dot (SiQD) ensembles coupled to the whispering gallery modes (WGMs) of spherical and cylindrical microcavities. The first project investigated the possibility of observing Purcell effects in an ensemble of QDs coupled to...
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Spring 2015
This thesis focuses on the photoluminescence (PL) of free-standing silicon quan- tum dots (QDs). Large changes in the emission spectrum were found to occur when the QDs were exposed to different environments while undergoing short-wavelength laser irradiation, a phenomenon that was the main focus...
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Observing and Manipulating Single Electrons Confined to Silicon Dangling Bond Ensembles with Non-Contact Atomic Force Microscopy
DownloadFall 2018
Non-contact atomic force microscopy (nc-AFM) is capable of inducing and resolving single-electron charge transitions of surface adsorbates. Here, these techniques are extended by studying the charge configurations of dangling bond (DB) ensembles on the hydrogen-terminated silicon surface. nc-AFM...
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Spring 2017
We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local...
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Fall 2015
Dangling Bonds (DBs) on the silicon surface exist when a silicon atom lacks a bonding partner, resulting in a localized orbital which is not involved in any chemical bonds. On the hydrogen-terminated Si(100) surface, such DBs introduce a mid-gap state. DBs can be created on this surface by the...
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Fall 2017
This thesis will discuss the charge dynamics of dangling bonds (DBs) on the hydrogen terminated Si(100) surface under the effects of temperature and perturbations from local electric fields. The experimental methods are then extended towards DB chains. Electronic time resolved imaging techniques...