Silicon Dangling Bond Chains

• Author / Creator

  Wood, John A

• We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local density of states. We demonstrate maximal charging configurations for odd numbered chains, rendering dan- gling bonds of the chain alternately negatively and non-negatively charged. Perturbing a chain electrostatically with negatively charged single dangling bonds, we find that we significantly change the elec- tronic structure of the chain, shifting its electronic state density away from the perturbing charge. Turning the single dangling bond into a bare dimer, the chain takes on its unperturbed character, proving that bare dimers do not support localized charge. Using the differential conductance mapping technique, we measure the energetic position of an unexplained bright feature often seen between two dangling bonds.

• Subjects / Keywords

  • Atomic Lines
  • NDR
  • Tunneling
  • Scanning Tunnelling Microscope
  • Silicon
  • Negative Differential Resistance
  • STM
  • Scanning Tunnelling Microscopy
  • DB
  • Dangling Bond

• Graduation date

  Spring 2017

• Type of Item

  Thesis

• Degree

  Master of Science

• DOI

  https://doi.org/10.7939/R3MW28S56

• License

  This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.