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- 7Atomic Layer Deposition
- 2Thin films
- 1ALD Process Optimization
- 1Antenna Coupled MIM detectors
- 1Complex Oxide
- 1Afshar, Amir
- 1Ahadi, Kaveh
- 1Clark, Michael P.
- 1Foroughi Abari, Ali
- 1Maraghechi, Pouya
- 1Motamedi, Pooyan
- 2Cadien, Ken (Chemical and Materials Engineering)
- 2Cadien, Ken (Department of Chemical and Materials Engineering)
- 1Cadien, Kenneth (Chemical and Materials Engineering)
- 1Cadien, Kennth (Chemical and Materials Engineering)
- 1Elezzabi, Abdulhakem (Electrical and Computer Engineering)
- 1Ivey, Douglas (Chemical and Materials Engineering)
Atomic Layer Deposition of Metal Oxides for the Preparation of High Performance Zn-Air Battery ElectrodesDownload
As the world continues to implement renewable energy technologies such as wind and solar, comes the demand for grid scale energy storage. Zn-air batteries (ZABs) are a promising candidate for grid scale energy storage because of their high energy density, low cost, high safety, and low...
Atomic layer deposition (ALD) is a powerful ultra-thin film deposition technique that uses sequential self-limiting surface reactions to provide conformal atomic scale film growth. Deposition of ALD films on many substrate systems has been studied before; however, limited data is available on...
Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer DepositionDownload
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet...
Design and Fabrication of Fractal Photoconductive Terahertz Emitters and Antenna Coupled Tunnel Diode Terahertz DetectorsDownload
Improved terahertz (THz) photoconductive antennas that are able to both emit higher THz radiation power and detect lower THz radiation signal levels than the traditional THz photoconductive antennas are presented. Also, different classes of fractals are investigated to realize whether the...
As conventional SiO2 gate dielectric thickness shrank to a few atomic layers, gate dielectric tunneling increased dramatically. The primary way to reduce tunneling is to increase film thickness, which decreases capacitance. High-dielectric-constant (high-κ) oxides were introduced to maintain...
Low Temperature Plasma Enhanced Atomic Layer Deposition of Conducting Zirconium Nitride: In-situ growth characterization, recipe development, and the sources of oxygen contamination in filmsDownload
Atomic layer deposition (ALD) enables uniform and conformal deposition of sub-nanometer thick films over large substrate area, hence is the most suitable technique for deposition of critical features in modern semiconductor fabrication. Compared to other transition metal nitrides, reported...
Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer DepositionDownload
Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is the development of a robust oxide with low density of defects and preferential mobility...