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- 4Silicon
- 2Scanning Tunnelling Microscopy
- 1Atomic
- 1Atomic Force Microscopy
- 1Atomic Lines
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Fall 2017
This thesis will discuss the charge dynamics of dangling bonds (DBs) on the hydrogen terminated Si(100) surface under the effects of temperature and perturbations from local electric fields. The experimental methods are then extended towards DB chains. Electronic time resolved imaging techniques...
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Spring 2017
We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local...
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Observing and Manipulating Single Electrons Confined to Silicon Dangling Bond Ensembles with Non-Contact Atomic Force Microscopy
DownloadFall 2018
Non-contact atomic force microscopy (nc-AFM) is capable of inducing and resolving single-electron charge transitions of surface adsorbates. Here, these techniques are extended by studying the charge configurations of dangling bond (DB) ensembles on the hydrogen-terminated silicon surface. nc-AFM...
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Fall 2009
Extending electronic devices beyond the limitations of current micro-electronics manufacturing will require detailed knowledge of how to make contacts to semiconductor surfaces. In this work, we investigated several methods by which such connections to silicon surfaces could be achieved. Scanning...
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Fall 2020
Advancements in scanning tunneling microscopy (STM) have enabled atomic-scale lithographic patterning of logic gates, memory, and wires, by selectively passivating hydrogen (H) atoms on a H-terminated silicon (Si) surface. However, atomically fabricated systems encounter challenges of developing...
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Spring 2020
On a perfect hydrogen-terminated Si(100)-2x1 surface, each surface silicon atom is capped with exactly one atom of hydrogen. When one of the capping hydrogen atoms is removed, the now unsatisfied orbital of the underlying silicon atom is exposed at that site. This site is better known as a...
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Detailed Study of Atomic Silicon Dangling Bond Charge State Dynamics on the Surface of Hydrogen Terminated Silicon (100)–2 × 1
DownloadFall 2015
Atomic Silicon Dangling Bonds (DBs), which are natural quantum dots, are sites where silicon atoms on a hydrogen-terminated silicon surface have no bound hydrogen atom (leaving an un-reacted sp3 hybrid orbital). These DBs hold the promise of new ultra-low power devices based on the Quantum...
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Spring 2021
The development of the modern transistor has sparked a technological revolution which has flourished for the past 70 years. Advancements in transistor design and fabrication have allowed for their continued shrinking in size and increase in operation speed. With the continued reduction in size...