Search
Skip to Search Results- 1Afshar, Amir
- 1Ahadi, Kaveh
- 1Clark, Michael P.
- 1Foroughi Abari, Ali
- 1Motamedi, Pooyan
- 1Muneshwar, Triratna P
-
Fall 2012
Atomic layer deposition (ALD) is a powerful ultra-thin film deposition technique that uses sequential self-limiting surface reactions to provide conformal atomic scale film growth. Deposition of ALD films on many substrate systems has been studied before; however, limited data is available on...
-
Atomic Layer Deposition of Metal Oxides for the Preparation of High Performance Zn-Air Battery Electrodes
DownloadSpring 2020
As the world continues to implement renewable energy technologies such as wind and solar, comes the demand for grid scale energy storage. Zn-air batteries (ZABs) are a promising candidate for grid scale energy storage because of their high energy density, low cost, high safety, and low...
-
Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
DownloadSpring 2015
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet...
-
Fall 2021
Growing demand for electrical energy calls for more efficient electronic devices not only in terms of performance but also in terms of energy-efficient fabrication processes. With traditional semiconductors (such as silicon) reaching their limits in electrical power handling, alternative...
-
High-κ Complex Oxides for Advanced Gate Dielectric Applications Grown by Atomic Layer Deposition
DownloadSpring 2016
As conventional SiO2 gate dielectric thickness shrank to a few atomic layers, gate dielectric tunneling increased dramatically. The primary way to reduce tunneling is to increase film thickness, which decreases capacitance. High-dielectric-constant (high-κ) oxides were introduced to maintain...
-
Low Temperature Plasma Enhanced Atomic Layer Deposition of Conducting Zirconium Nitride: In-situ growth characterization, recipe development, and the sources of oxygen contamination in films
DownloadSpring 2015
Atomic layer deposition (ALD) enables uniform and conformal deposition of sub-nanometer thick films over large substrate area, hence is the most suitable technique for deposition of critical features in modern semiconductor fabrication. Compared to other transition metal nitrides, reported...
-
Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition
DownloadSpring 2014
Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is the development of a robust oxide with low density of defects and preferential mobility...