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Fall 2014
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have great potential for high-power and high-frequency applications, but current leakage issues compromise their reliability. This research focuses on developing GaN metal-oxide semiconductor field-effect transistors (MOSFETs),...
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Enabling Flexible Electronics: Demonstration of the Tunneling Junction Transistor (TJT) and Flexible Circuit Elements
DownloadSpring 2018
Thin-film technology continues to evolve as it finds new technological spaces to fulfill that will inevitably lead to an increased integration between society and technology. The aims of this research are to push beyond the limits of thin film electronics to enable a new era of flexible...
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Engineering Considerations for the Design of High Performance Zinc Oxide Thin Film Transistors
DownloadSpring 2018
Zinc oxide (ZnO) thin film transistors (TFTs) are garnering significant interest recently due to their unique combination of high optical transparency, moderately high electron mobility, good stability, and compatibility with low temperature processing. If a low temperature processed, high...
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Fall 2015
All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design architecture is the inability to produce an inherently true normally-off device. The more traditional...