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Spring 2020
On a perfect hydrogen-terminated Si(100)-2x1 surface, each surface silicon atom is capped with exactly one atom of hydrogen. When one of the capping hydrogen atoms is removed, the now unsatisfied orbital of the underlying silicon atom is exposed at that site. This site is better known as a...
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Fall 2009
Extending electronic devices beyond the limitations of current micro-electronics manufacturing will require detailed knowledge of how to make contacts to semiconductor surfaces. In this work, we investigated several methods by which such connections to silicon surfaces could be achieved. Scanning...
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Fall 2015
Dangling Bonds (DBs) on the silicon surface exist when a silicon atom lacks a bonding partner, resulting in a localized orbital which is not involved in any chemical bonds. On the hydrogen-terminated Si(100) surface, such DBs introduce a mid-gap state. DBs can be created on this surface by the...
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Fall 2012
In studies of nanoscale materials, electron tomography (ET) can be used to obtain three dimensional information on the morphology and spatial distribution of nanoparticles. Electron tomography records a tilt series of projected images of an object and then mathematically reconstructs a 3D map of...