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All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design architecture is the inability to produce an inherently true normally-off device. The more traditional...
To enable scalable MOSFET technology in III-V semiconductor platforms, high quality semiconductor-oxide interfaces are essential. In this work, the role of surface reactions in the oxide deposition process is examined, with the objective of optimizing the thermodynamics of the semiconductor-oxide...