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Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
DownloadSpring 2015
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet...
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Fall 2014
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have great potential for high-power and high-frequency applications, but current leakage issues compromise their reliability. This research focuses on developing GaN metal-oxide semiconductor field-effect transistors (MOSFETs),...
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Spring 2017
To enable scalable MOSFET technology in III-V semiconductor platforms, high quality semiconductor-oxide interfaces are essential. In this work, the role of surface reactions in the oxide deposition process is examined, with the objective of optimizing the thermodynamics of the semiconductor-oxide...
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Fall 2021
Growing demand for electrical energy calls for more efficient electronic devices not only in terms of performance but also in terms of energy-efficient fabrication processes. With traditional semiconductors (such as silicon) reaching their limits in electrical power handling, alternative...