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Fall 2014
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have great potential for high-power and high-frequency applications, but current leakage issues compromise their reliability. This research focuses on developing GaN metal-oxide semiconductor field-effect transistors (MOSFETs),...
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Engineering Considerations for the Design of High Performance Zinc Oxide Thin Film Transistors
DownloadSpring 2018
Zinc oxide (ZnO) thin film transistors (TFTs) are garnering significant interest recently due to their unique combination of high optical transparency, moderately high electron mobility, good stability, and compatibility with low temperature processing. If a low temperature processed, high...