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Detailed Study of Atomic Silicon Dangling Bond Charge State Dynamics on the Surface of Hydrogen Terminated Silicon (100)–2 × 1
DownloadFall 2015
Atomic Silicon Dangling Bonds (DBs), which are natural quantum dots, are sites where silicon atoms on a hydrogen-terminated silicon surface have no bound hydrogen atom (leaving an un-reacted sp3 hybrid orbital). These DBs hold the promise of new ultra-low power devices based on the Quantum...
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Observing and Manipulating Single Electrons Confined to Silicon Dangling Bond Ensembles with Non-Contact Atomic Force Microscopy
DownloadFall 2018
Non-contact atomic force microscopy (nc-AFM) is capable of inducing and resolving single-electron charge transitions of surface adsorbates. Here, these techniques are extended by studying the charge configurations of dangling bond (DB) ensembles on the hydrogen-terminated silicon surface. nc-AFM...
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Spring 2017
We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local...
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Fall 2015
Dangling Bonds (DBs) on the silicon surface exist when a silicon atom lacks a bonding partner, resulting in a localized orbital which is not involved in any chemical bonds. On the hydrogen-terminated Si(100) surface, such DBs introduce a mid-gap state. DBs can be created on this surface by the...
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Fall 2017
This thesis will discuss the charge dynamics of dangling bonds (DBs) on the hydrogen terminated Si(100) surface under the effects of temperature and perturbations from local electric fields. The experimental methods are then extended towards DB chains. Electronic time resolved imaging techniques...