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Skip to Search Results- 2Wu, Nathanael Lap-Yan
- 1Achal, Roshan
- 1Alam, Kazi, MM
- 1Chowdhury, Fatema R
- 1Chung, Deborah K
- 1De los Reyes, Glenda B
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Spring 2017
Zinc Oxide (ZnO) is a promising wide band gap semiconductor with exceptional electrical and optical properties. Thin film ZnO can be used for a wide variety of electronic and optoelectronic device applications. The first step on the way to achieving good quality devices is to grow optimum quality...
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Fall 2011
A capillary-type fluorescent-core microcavity refractive index sensor based on whispering gallery mode (WGM) resonances is presented. The device consists of a glass microcapillary with a thin layer of fluorescent silicon quantum dots (QDs) coated on the channel surface. The high index of the QD...
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Spring 2014
The impressive developments in the semiconductor industry over the past five decades have largely been dependent on the ability to continually reduce the dimensions of devices on a chip. However, as critical dimension requirements for these devices approach the limits of photolithography, new...
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Spring 2014
The impressive developments in the semiconductor industry over the past five decades have largely been dependent on the ability to continually reduce the dimensions of devices on a chip. However, as critical dimension requirements for these devices approach the limits of photolithography, new...
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Fall 2014
This thesis is focused on the Si-based anode materials for lithium-ion batteries (LIBs) as well as biomass-derived carbons for LIBs and sodium-ion batteries (NIBs). In our first attempt we investigated the effect of the support growth substrate as well as of aluminum coating layers on the...
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Spring 2015
This thesis is focused on the silicon-based anode materials for lithium-ion batteries (LIBs) as well as germanium-based electrode materials for sodium-ion batteries (NIBs). In our first attempt we studied electrochemical cycling stability and degradation mechanisms of silicon nanowires (SiNWs)...
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Spring 2017
We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local...
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Fall 2015
Dangling Bonds (DBs) on the silicon surface exist when a silicon atom lacks a bonding partner, resulting in a localized orbital which is not involved in any chemical bonds. On the hydrogen-terminated Si(100) surface, such DBs introduce a mid-gap state. DBs can be created on this surface by the...
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Spring 2011
The field of plasmonics has offered the promise to combine electronics and photonics at the nanometer scale for ultrafast information processing speeds and compact integration of devices. Various plasmonic waveguide schemes were proposed with the potential to achieve switching functionalities and...
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Silicon Nanoparticles from the Inside Out: Exploring the Internal Structure of Silicon Nanoparticles and Its Impact on Their Photoluminescence
DownloadFall 2020
Silicon nanoparticles (SiNPs) have garnered significant attention as a biologically compatible alternative to traditional quantum dots. SiNPs are well suited for a wide range of applications due to their photoluminescence (PL) and chemical properties. These advantageous properties can be...