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High Surface Area Nanoelectromechanical Systems via the Integration of Glancing Angle Deposition Thin Films

  • Author / Creator
    Westwood, Jocelyn N.
  • High surface area nanoelectromechanical systems (NEMS) are fabricated using glancing angle deposition (GLAD) thin films as the high surface area layer. The GLAD films are deposited on already-released NEMS cantilevers and doubly clamped beams (DCBs) with good uniformity. The resonance frequencies of the coated devices are lower than uncoated NEMS due to mass loading. The resonance frequencies of the coated cantilevers can be predicted accurately. The resonance frequencies of the DCBs are difficult to predict because of compressive stress in the substrate from which the devices are fabricated. The quality factors of the coated devices are approximately one order of magnitude smaller than the uncoated devices due to a semi-continuous layer at the base of the GLAD film. The GLAD film introduces a compressive stress of 5.3-9.3 MPa. The quantification of the stress introduced by the GLAD indicates that these devices may also be useful as stress sensors.

  • Subjects / Keywords
  • Graduation date
    2013-11
  • Type of Item
    Thesis
  • Degree
    Master of Science
  • DOI
    https://doi.org/10.7939/R36970840
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
  • Language
    English
  • Institution
    University of Alberta
  • Degree level
    Master's
  • Department
    • Department of Electrical and Computer Engineering
  • Specialization
    • Microsystems and Nanodevices
  • Supervisor / co-supervisor and their department(s)
    • Sit, Jeremy (Electrical and Computer Engineering)
  • Examining committee members and their departments
    • Sit, Jeremy (Electrical and Computer Engineering)
    • Hiebert, Wayne (Physics)
    • Thundat, Thomas (Chemical Engineering)