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- 1Anodic Alumina Oxide (AAO)
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- 1DNA
- 1Interlayer Magnetoresistance (ILMR)
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Spring 2014
Magnetoresistance (MR) effect is extensively used in state-of-the-art magnetic field sensing and data storage devices. In this work, we present (a) current-perpendicular-to-plane (CPP) MR effect in multilayer graphene (MLG) grown on cobalt (Co) foil and (b) spin valve MR effect in a vertical...
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Fall 2014
Electrons, the fundamental charge carriers in solid-state devices, possess three intrinsic properties: mass, charge and spin. Spin is a quantum mechanical property, but can be loosely visualized as a tiny “intrinsic” magnetic dipole moment attached to an electron. In conventional electron...