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Magnetoresistance Effects in Carbon-Based Nanostructures

  • Author / Creator
    Singh, Abhay Pratap
  • Magnetoresistance (MR) effect is extensively used in state-of-the-art magnetic field sensing and data storage devices. In this work, we present (a) current-perpendicular-to-plane (CPP) MR effect in multilayer graphene (MLG) grown on cobalt (Co) foil and (b) spin valve MR effect in a vertical array of multiwall carbon nanotube (MWCNT) spin valves. In part (a) strong room-temperature CPP-MR effects have been observed in as-grown MLG on Co. The origin of the MR effect lies in the graphene-Co interface and interlayer coupling between the graphene layers of MLG. In part (b) an array of vertically standing MWCNT spin valves has been synthesized in the pores of an anodic alumina template. A spin valve MR and spin relaxation length of ~ 0.28 μm have been observed at 8 K, which disappears at higher temperature. This indicates necessity of alternative designs for room temperature operation of MWCNT spin valves.

  • Subjects / Keywords
  • Graduation date
    2014-06
  • Type of Item
    Thesis
  • Degree
    Master of Science
  • DOI
    https://doi.org/10.7939/R3JS9HF5M
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
  • Language
    English
  • Institution
    University of Alberta
  • Degree level
    Master's
  • Department
    • Department of Electrical and Computer Engineering
  • Specialization
    • Microsystems and Nanodevices
  • Supervisor / co-supervisor and their department(s)
    • Pramanik, Sandipan (Department of Electrical and Computer Engineering)
  • Examining committee members and their departments
    • Jacob, Zubin (Department of Electrical and Computer Engineering)
    • Vaidyanathan, Mani (Department of Electrical and Computer Engineering)