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Spring 2010
A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both...
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Mixed Abrasive Slurries of Ceria and Silica Nanoparticles formed by Electrostatic Attraction for Shallow Trench Isolation Chemical Mechanical Polishing
DownloadFall 2019
Device isolation is achieved using shallow trench isolation (STI) which requires chemical mechanical planarization (CMP) of the excess and unwanted oxide layer and stopping on the underlying silicon nitride layer. The increasing stringent requirement of the STI CMP performance is the driving...