Evaluation of e-beam SiO2 for MIM application

• Author / Creator

  Guo, Wei

• A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both electrically and optically. Tantalum was deposited using a sputtering system, while the oxide was evaporated using an E-beam evaporator. A Keithley 4200-SCS system combined with a four-probe station was adopted to measure both current-voltage and capacitance-voltage (C-V) characteristics. The I-V curves for all MIM devices were almost linear except the one with 8nm of SiO2 exhibited some nonlinearity. The C-V measurement that was carried out at AC frequency showed changing resistance for all samples and the resistance decreased as the thickness decreased. However, the E-beam SiO2 was found not to be a desirable oxide for MIM application due to the existence of many defects.

• Subjects / Keywords

  • SiO2
  • E-beam
  • Metal-insulator-metal

• Graduation date

  Spring 2010

• Type of Item

  Thesis

• Degree

  Master of Science

• DOI

  https://doi.org/10.7939/R3WK5P

• License

  This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.