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Skip to Search Results- 2Magnetoresistance (MR)
- 1Anodic Alumina Oxide (AAO)
- 1CVD grown graphene on nickel
- 1Current perpendicuar to plane (CPP) magnetoresistance
- 1Interlayer Magnetoresistance (ILMR)
- 1Interlayer magnetoresistance (ILMR)
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Spring 2014
Magnetoresistance (MR) effect is extensively used in state-of-the-art magnetic field sensing and data storage devices. In this work, we present (a) current-perpendicular-to-plane (CPP) MR effect in multilayer graphene (MLG) grown on cobalt (Co) foil and (b) spin valve MR effect in a vertical...
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Spring 2016
Magnetoresistance (MR), the change in electrical resistance of a solid-state system due to an external magnetic field, is a key effect in condensed matter physics, both for fundamental understanding of charge transport phenomena, as well as immense commercial implications. Artificial layered...