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Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
DownloadSpring 2015
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet
the three-dimensional growth occurs afterwards. In-situ ellipsometry was employed to investigate the evolution of optical properties of the films during growth, and the results are in good agreement with structural observations.
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Fall 2014
In this thesis, a new technique named vapour-liquid-solid glancing angle deposition (VLS-GLAD) will be used to enhance structural control over branched nanowire (NW) arrays. NWs are 1D crystals that have been extensively applied in sensors, photovoltaic devices, and transistors. The functional
also be used to enable the fabrication of azimuthally aligned nanotrees without requiring epitaxy at the substrate. Aperiodic signals will be encoded into diameter oscillations along the length of branches by engineering their local shadowing environment using dynamic substrate motion during growth