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Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
DownloadSpring 2015
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet
the three-dimensional growth occurs afterwards. In-situ ellipsometry was employed to investigate the evolution of optical properties of the films during growth, and the results are in good agreement with structural observations.