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- 1Anodic Alumina Oxide (AAO)
- 1Interlayer Magnetoresistance (ILMR)
- 1Magnetoresistance (MR)
- 1Multilayer Graphene (MLG)
- 1Multiwall Carbon Nanotube (MWCNT)
- 1Raman Spectroscopy
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Spring 2014
Magnetoresistance (MR) effect is extensively used in state-of-the-art magnetic field sensing and data storage devices. In this work, we present (a) current-perpendicular-to-plane (CPP) MR effect in multilayer graphene (MLG) grown on cobalt (Co) foil and (b) spin valve MR effect in a vertical...
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