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High-κ Complex Oxides for Advanced Gate Dielectric Applications Grown by Atomic Layer Deposition
DownloadSpring 2016
As conventional SiO2 gate dielectric thickness shrank to a few atomic layers, gate dielectric tunneling increased dramatically. The primary way to reduce tunneling is to increase film thickness, which decreases capacitance. High-dielectric-constant (high-κ) oxides were introduced to maintain...
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