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Skip to Search Results- 3Chemical Mechanical Polishing
- 2Chemical Mechanical Planarization
- 1 Mixed Abrasive Slurries
- 1CMP
- 1CeO2
- 1Ceria
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Spring 2012
The chemical mechanical polishing of Copper (Cu-CMP) is a complex and poorly understood process. Despite this, it is widely used throughout the semiconductor and microelectronics industries, and makes up a significant portion of wafer processing costs. In these contexts, desirable polishing...
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Fall 2014
Interactions of finely dispersed abrasive particles in chemical mechanical planarization (CMP) slurries play a vital role in determining the polishing performance. In this study, coupled influence of hydrodynamic and colloidal interactions on the attachment of nanosized ceria (CeO2) particles to...
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Mixed Abrasive Slurries of Ceria and Silica Nanoparticles formed by Electrostatic Attraction for Shallow Trench Isolation Chemical Mechanical Polishing
DownloadFall 2019
Device isolation is achieved using shallow trench isolation (STI) which requires chemical mechanical planarization (CMP) of the excess and unwanted oxide layer and stopping on the underlying silicon nitride layer. The increasing stringent requirement of the STI CMP performance is the driving...