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- 2Atomic Layer Deposition
- 1Complex Oxide
- 1Density Functional Theory
- 1Growth Mechanism
- 1Hafnium Oxide
- 1High-K Oxide
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High-κ Complex Oxides for Advanced Gate Dielectric Applications Grown by Atomic Layer Deposition
DownloadSpring 2016
As conventional SiO2 gate dielectric thickness shrank to a few atomic layers, gate dielectric tunneling increased dramatically. The primary way to reduce tunneling is to increase film thickness, which decreases capacitance. High-dielectric-constant (high-κ) oxides were introduced to maintain...
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Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition
DownloadSpring 2014
Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is the development of a robust oxide with low density of defects and preferential mobility...
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