Search
Skip to Search Results-
Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer Deposition
DownloadSpring 2015
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet...
-
Fall 2014
In this thesis, a new technique named vapour-liquid-solid glancing angle deposition (VLS-GLAD) will be used to enhance structural control over branched nanowire (NW) arrays. NWs are 1D crystals that have been extensively applied in sensors, photovoltaic devices, and transistors. The functional...
-
In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
Download2018-01-01
Motamedi, Pouyan, Bosnick, Ken, Cadien, Ken, Hogan, James D.
Ultrathin metal films have a wide variety of applications, especially in microelectronics. A key method to deposit these films is plasma-enhanced atomic layer deposition (PEALD), which is known for its ability to deposit thin films conformally and at relatively low temperatures. Building on the...