Metal Oxide Processing on Gallium Nitride and Silino

  • Author / Creator
    von Hauff, Peter A
  • III-V Nitrides are intriguing semiconductors for high-power RF amplifiers and other applications. Gallium Nitride has become popular for mm-HFETs due to its material properties. The HFET however, has yet to fully realize the full potential of GaN. MOSFETs provide an ideal structure because they can provide a true off-state while increasing the possible breakdown voltage. Deposition techniques for low defect density oxides must be further developed to fully realize GaN MOSFET technology. Atomic Layer Deposition provides a promising process technique by which to deposit low defect density oxides on GaN. Controlling surface chemistry can allow deposition of low defect oxides on a wide range of semiconductors including Silicon.

  • Subjects / Keywords
  • Graduation date
    Fall 2012
  • Type of Item
  • Degree
    Master of Science
  • DOI
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.