Midgap states in gapped graphene induced by short-range impurities

• Author / Creator

  Grinek, Stepan

• Graphene is a recently created truly two-dimensional carbon material with promising
  properties.
  It is a prospective candidate for the next generation
  of microelectronics. Current carriers in graphene have relativistic properties,
  its lattice is very strong and yet flexible, granting graphene's
  ballistic conductivity on the submicron scale at the room temperatures.

  Midgap bound state induced by a single impurity in graphene does
  not cause essential changes in the electronic liquid distribution
  at all reasonable values of the coupling strength. Thus there
  are no unusual screening effects predicted for the graphene with long-range
  Coulomb impurity. This result holds in case of multiple impurities
  localized in the finite area on the lattice. Exact expressions
  for the lattice Green functions are derived.

  The absence of critical screening for the short-range
  impurities in graphene is a main result of the work. Another
  outcome is the observation of the limitations on the Dirac
  approximation applicability.

• Subjects / Keywords

  • Mesoscopic physics
  • Nanotechnology
  • Graphene

• Graduation date

  Spring 2011

• Type of Item

  Thesis

• Degree

  Master of Science

• DOI

  https://doi.org/10.7939/R3Q06N

• License

  This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.