Midgap states in gapped graphene induced by short-range impurities

  • Author / Creator
    Grinek, Stepan
  • Graphene is a recently created truly two-dimensional carbon material with promising properties. It is a prospective candidate for the next generation of microelectronics. Current carriers in graphene have relativistic properties, its lattice is very strong and yet flexible, granting graphene's ballistic conductivity on the submicron scale at the room temperatures. Midgap bound state induced by a single impurity in graphene does not cause essential changes in the electronic liquid distribution at all reasonable values of the coupling strength. Thus there are no unusual screening effects predicted for the graphene with long-range Coulomb impurity. This result holds in case of multiple impurities localized in the finite area on the lattice. Exact expressions for the lattice Green functions are derived. The absence of critical screening for the short-range impurities in graphene is a main result of the work. Another outcome is the observation of the limitations on the Dirac approximation applicability.

  • Subjects / Keywords
  • Graduation date
  • Type of Item
  • Degree
    Master of Science
  • DOI
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
  • Language
  • Institution
    University of Alberta
  • Degree level
  • Department
    • Department of Electrical and Computer Engineering
  • Supervisor / co-supervisor and their department(s)
    • Chen, Jie (Electrical and Computing Engineering)
  • Examining committee members and their departments
    • Brett, Michael (Electrical and Computing Engineering)
    • Zhang, Hao (Chemical and Materials Engineering)