Dual Gate Metal-Insulator Tunneling Transistors

  • Author / Creator
    McDermott, Aidan J.
  • This thesis introduces and investigates new class of metal insulator tunneling transistor (MITT) devices. MITT devices with sub 5nm features, having a geometry that represents a realistic implementation, are studied using a simulation model developed for this thesis. The effect of changing the dimensions of the device is studied, and the performance of devices having different geometries is compared. Two different fabrication processes are developed and preliminary results for one of these processes are presented.

  • Subjects / Keywords
  • Graduation date
    Fall 2023
  • Type of Item
  • Degree
    Master of Science
  • DOI
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.