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Nanoporous anodized aluminum structures within micro-channels

  • Author / Creator
    Goh, Alex
  • We examined the production of high-surface area anodized porous aluminum (Al) oxide within a micro-scale channel. A potential surface modification using an initial layer of oxidized tantalum (Ta) was also studied. Channels were etched into a layer of silicon dioxide on silicon wafers (groups of sixteen 1, 1.5, 2, 2.5, 3, or 4 μm-wide channels x 1 μm deep x 6 cm long). A nominal deposition of 200 nm of Al or 50 nm of Ta on the channel base resulted in the deposition of ~100 nm Al or ~30 nm Ta on the channel side-walls. Anodization was performed at 8, 12, 16, 20 V and anodization times of 6, 8, 10 minutes for Al-only, and Al-on-Ta film layers. We produced continuous highly porous, 200 nm thick, nano-structured aluminum oxide (anodized under 12 and 16V conditions) within 1-4 μm wide x 1 μm deep x 6cm long channels.

  • Subjects / Keywords
  • Graduation date
    2011-11
  • Type of Item
    Thesis
  • Degree
    Master of Science
  • DOI
    https://doi.org/10.7939/R35P4T
  • License
    This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
  • Language
    English
  • Institution
    University of Alberta
  • Degree level
    Master's
  • Department
    • Department of Electrical and Computer Engineering and Department of Biomedical Engineering
  • Supervisor / co-supervisor and their department(s)
    • Burrell, Robert
    • Chen, Jie
  • Examining committee members and their departments
    • Nowrouzian, Behrouz (Electrical and Computer Engineering)
    • McCaffrey, William (Chemical and Materials Engineering)