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Midgap states in gapped graphene induced by short-range impurities
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- Author / Creator
- Grinek, Stepan
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Graphene is a recently created truly two-dimensional carbon material with promising
properties.
It is a prospective candidate for the next generation
of microelectronics. Current carriers in graphene have relativistic properties,
its lattice is very strong and yet flexible, granting graphene's
ballistic conductivity on the submicron scale at the room temperatures.Midgap bound state induced by a single impurity in graphene does
not cause essential changes in the electronic liquid distribution
at all reasonable values of the coupling strength. Thus there
are no unusual screening effects predicted for the graphene with long-range
Coulomb impurity. This result holds in case of multiple impurities
localized in the finite area on the lattice. Exact expressions
for the lattice Green functions are derived.The absence of critical screening for the short-range
impurities in graphene is a main result of the work. Another
outcome is the observation of the limitations on the Dirac
approximation applicability. -
- Subjects / Keywords
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- Graduation date
- Spring 2011
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- Type of Item
- Thesis
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- Degree
- Master of Science
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- License
- This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.