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Fall 2014
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have great potential for high-power and high-frequency applications, but current leakage issues compromise their reliability. This research focuses on developing GaN metal-oxide semiconductor field-effect transistors (MOSFETs),...
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Spring 2017
To enable scalable MOSFET technology in III-V semiconductor platforms, high quality semiconductor-oxide interfaces are essential. In this work, the role of surface reactions in the oxide deposition process is examined, with the objective of optimizing the thermodynamics of the semiconductor-oxide...