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Mixed Abrasive Slurries of Ceria and Silica Nanoparticles formed by Electrostatic Attraction for Shallow Trench Isolation Chemical Mechanical Polishing
DownloadFall 2019
Device isolation is achieved using shallow trench isolation (STI) which requires chemical mechanical planarization (CMP) of the excess and unwanted oxide layer and stopping on the underlying silicon nitride layer. The increasing stringent requirement of the STI CMP performance is the driving...
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