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Low Temperature Plasma Enhanced Atomic Layer Deposition of Conducting Zirconium Nitride: In-situ growth characterization, recipe development, and the sources of oxygen contamination in films
DownloadSpring 2015
Atomic layer deposition (ALD) enables uniform and conformal deposition of sub-nanometer thick films over large substrate area, hence is the most suitable technique for deposition of critical features in modern semiconductor fabrication. Compared to other transition metal nitrides, reported...
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