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Skip to Search Results- 2Copper
- 1Adsorption
- 1Chemical Mechanical Planarization
- 1Chemical Mechanical Polishing
- 1Hydrogen sulfide
- 1Nanofabrication
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Spring 2012
The chemical mechanical polishing of Copper (Cu-CMP) is a complex and poorly understood process. Despite this, it is widely used throughout the semiconductor and microelectronics industries, and makes up a significant portion of wafer processing costs. In these contexts, desirable polishing...
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Characterization of copper supported on titanosilicates for room temperature H2S adsorption
DownloadSpring 2012
Hydrogen sulfide (H2S) is a major contaminant of industrial gas streams. Amongst the various methods used for its removal, adsorption by metal oxides is the most promising. Copper oxide (CuO) is shown to have superior H2S removal capability at room temperature. H2S removal at room...