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- 1Afshar, Amir
- 1Ahadi, Kaveh
- 1Clark, Michael P.
- 1Foroughi Abari, Ali
- 1Maraghechi, Pouya
- 1Milburn, Eric
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- 2Cadien, Ken (Chemical and Materials Engineering)
- 2Cadien, Ken (Department of Chemical and Materials Engineering)
- 2Cadien, Kenneth (Chemical and Materials Engineering)
- 1Barlage, Doug (Electrical and Computer Engineering)
- 1Barlage, Douglas (Electrical and Computer Engineering)
- 1Cadien, Kennth (Chemical and Materials Engineering)
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Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition
DownloadSpring 2014
Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is the development of a robust oxide with low density of defects and preferential mobility...
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