Nanolithography on H:Si(100)-(2 x 1) using combined Scanning Tunneling Microscopy and Field Ion Microscopy techniques

• Author / Creator

  Vesa, Cristian

• This thesis reports on the combined techniques of ultra-high vacuum scanning tunneling microscopy (UHV-STM) and field ion microscopy (FIM). The apex structure of STM scanning tips correlates with their ability to yield highly-resolved images and to perform accurate hydrogen desorption on hydrogen-terminated silicon, H:Si(100)-(2 x 1). The FIM permits not only tip apex characterization but also in vacuo tip reshaping by field evaporation and nitrogen etching. STM nanolithographic techniques are employed to perform hydrogen removal and thus create assemblies of dangling bonds. The thesis provides an overview of the mechanisms underlying hydrogen removal in various regimes and also calculations to estimate tip-induced field effects. The capabilities of the apparatus are explored and techniques are established to be pursued further for optimization. These techniques have the potential of advancing the production of novel computing architectures based on silicon atomic quantum cellular automata (SiAQCA). Such devices constitute promising, low energy-consuming alternatives to transistor-based architectures.

• Subjects / Keywords

  • Feedback-controlled lithography
  • Dangling bonds
  • Quantum cellular automata
  • H:Si(100)-(2 x 1)
  • Nanolithography
  • FIM
  • STM
  • Hydrogen desorption

• Graduation date

  Fall 2011

• Type of Item

  Thesis

• Degree

  Master of Science

• DOI

  https://doi.org/10.7939/R38057

• License

  This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for non-commercial purposes. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.