Search
Skip to Search Results- 2Wu, Nathanael Lap-Yan
- 1Achal, Roshan
- 1Alam, Kazi, MM
- 1Bhattacharya, Sanjay
- 1Chou, Zou-Long
- 1Chung, Deborah K
-
Spring 2011
The field of plasmonics has offered the promise to combine electronics and photonics at the nanometer scale for ultrafast information processing speeds and compact integration of devices. Various plasmonic waveguide schemes were proposed with the potential to achieve switching functionalities and...
-
Spring 2014
The impressive developments in the semiconductor industry over the past five decades have largely been dependent on the ability to continually reduce the dimensions of devices on a chip. However, as critical dimension requirements for these devices approach the limits of photolithography, new...
-
Spring 2010
As the demand for oil and gas resources increases pipeline construction pushes further into the Arctic and sub-Arctic regions. Consequently, these buried pipelines suffer much harsh environmental and complex loading conditions. Moreover, to increase the transporting efficiency, larger size pipes...
-
Fall 2015
2015 marks the 50th anniversary of Moore's law, which has described the exponential progress in semiconductor patterning technologies, enabling creation of smaller circuitry features at greater densities. These continued hardware developments, economically mass manufactured, have made possible...
-
Fall 2017
The elements of Group 14 show an extensive range of chemical behaviors. Lying at the boundary between metals and non-metals, some members of Group 14, namely silicon and germanium, are intermediate in their properties. These semiconductors are extremely important in science and technology. Si,...
-
Fall 2014
Electrons, the fundamental charge carriers in solid-state devices, possess three intrinsic properties: mass, charge and spin. Spin is a quantum mechanical property, but can be loosely visualized as a tiny “intrinsic” magnetic dipole moment attached to an electron. In conventional electron...
-
Spring 2015
Silicon nanocrystals (SiNCs) have been suggested as promising candidates for bioimaging because of their abundance, biocompatibility, and stable photoluminescent properties. However, “naked” SiNCs are insoluble in water and very reactive. As a result, NC surface functionalization is necessary to...
-
Spring 2020
On a perfect hydrogen-terminated Si(100)-2x1 surface, each surface silicon atom is capped with exactly one atom of hydrogen. When one of the capping hydrogen atoms is removed, the now unsatisfied orbital of the underlying silicon atom is exposed at that site. This site is better known as a...
-
Spring 2017
We present the characterization of close-spaced linear dangling bond structures, or dangling bond chains, two to seven dangling bonds long, on a hydrogen terminated silicon (100)-2x1 surface using a scan- ning tunnelling microscope. Constant height differential conductance maps reveal their local...
-
Observing and Manipulating Single Electrons Confined to Silicon Dangling Bond Ensembles with Non-Contact Atomic Force Microscopy
DownloadFall 2018
Non-contact atomic force microscopy (nc-AFM) is capable of inducing and resolving single-electron charge transitions of surface adsorbates. Here, these techniques are extended by studying the charge configurations of dangling bond (DB) ensembles on the hydrogen-terminated silicon surface. nc-AFM...