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Gallium nitride (GaN) high-electron mobility transistors (HEMTs) have great potential for high-power and high-frequency applications, but current leakage issues compromise their reliability. This research focuses on developing GaN metal-oxide semiconductor field-effect transistors (MOSFETs),...
Deposition and Characterization of AlN and GaN Thin Films by Plasma-Enhanced Atomic Layer DepositionDownload
III-nitride semiconductors have a combination of structural characteristics and engineering properties that give them a unique place among semiconductors. The fact that they have the same crystal structure makes it possible to deposit alloys with fine-tuned band gaps from infrared to ultraviolet...
To enable scalable MOSFET technology in III-V semiconductor platforms, high quality semiconductor-oxide interfaces are essential. In this work, the role of surface reactions in the oxide deposition process is examined, with the objective of optimizing the thermodynamics of the semiconductor-oxide...