ERA Banner
Download Add to Cart Share
More Like This
  • http://hdl.handle.net/10402/era.24967
  • Fabrication of Nanostructures by Low Voltage Electron Beam Lithography
  • Adeyenuwo, Adegboyega P.
  • English
  • lithography
    nanofabrication
    e-beam
    nanostructure
    cold development
    polymethylmethacrylate
    PMMA
    negative-tone tone resist
    positive-tone tone resist
    density multiplication
    EBL
    electron beam lithography
    model of development
    fragmentation of PMMA
    model of exposure of PMMA
    electron beam lithography simulator
    density multiplication of nanostructures
    monte carlo simulation
  • Jan 6, 2012 9:15 AM
  • Thesis
  • English
  • Adobe PDF
  • 4938628 bytes
  • Electron Beam Lithography (EBL) is a powerful tool for structuring materials at the deep nanoscale. Modeling and simulation of electron-beam interactions at this length scale is vital to understanding and optimizing nanofabrication using EBL. The low to high voltage (5 keV – 100 keV) regimes of EBL have been studied for decades. However, the ultra-low regime (< 5 keV) provides an opportunity to further rationalize the understanding of this powerful technique and explore its applications. The ultra-low voltage regime was studied using (poly) methyl- methacrylate (PMMA) as the resist, and important metrics at this regime such as dose windows, exposure sensitivity and dose variation with exposure energy are explored. An application of low voltage EBL is presented to develop a process for pattern density multiplication in a single step. Density multiplication was demonstrated for arrays of nanostructures using a combination of experiments and simulation. This approach increased the areal density of the lithographically patterned lines by a factor of approximately 2 for dots and lines in a single exposure and development step. This application is not only interesting from a technological perspective, but also demonstrates the power of a combined experimental and simulation optimization strategy.
  • Density multiplication of nanostructures fabricated by ultralow voltage electron beam lithography using PMMA as positive- and negative-tone resist Adegboyega P. Adeyenuwo, Maria Stepanova, and Steven K. Dew, J. Vac. Sci. Technol. B 29, 06F312 (2011), DOI:10.1116/1.3657512
  • Master's
  • Master of Science
  • Department of Electrical and Computer Engineering
  • Micro-Electro-Mechanical Systems (MEMS) & Nanosystems
  • Spring 2012
  • Dew, Steve K. (Electrical and Computer Engineering)
    Stepanova, Maria (Electrical and Computer Engineering, National Insitute for Nanotechnology)
  • Dew, Steve K. (Electrical and Computer Engineering)
    Sit, Jeremy (Electrical and Computer Engineering)
    Stepanova, Maria (Electrical and Computer Engineering, National Insitute for Nanotechnology)
    Cadien, Kenneth (Chemical and Materials Engineering)