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Permanent link (DOI): https://doi.org/10.7939/R3FS7G

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Metal Oxide Processing on Gallium Nitride and Silino Open Access

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Other title
Subject/Keyword
Atomic Layer Depostion
metal oxides
Gallium Nitride
Type of item
Thesis
Degree grantor
University of Alberta
Author or creator
von Hauff, Peter A
Supervisor and department
Dr. Doug Barlage
Examining committee member and department
Dr. Jeremy Sit
Dr. Doug Barlage
Dr. Ken Cadien
Department
Department of Electrical and Computer Engineering
Specialization
Microsystems and Nanodevices
Date accepted
2012-09-28T15:56:40Z
Graduation date
2012-09
Degree
Master of Science
Degree level
Master's
Abstract
III-V Nitrides are intriguing semiconductors for high-power RF amplifiers and other applications. Gallium Nitride has become popular for mm-HFETs due to its material properties. The HFET however, has yet to fully realize the full potential of GaN. MOSFETs provide an ideal structure because they can provide a true off-state while increasing the possible breakdown voltage. Deposition techniques for low defect density oxides must be further developed to fully realize GaN MOSFET technology. Atomic Layer Deposition provides a promising process technique by which to deposit low defect density oxides on GaN. Controlling surface chemistry can allow deposition of low defect oxides on a wide range of semiconductors including Silicon.
Language
English
DOI
doi:10.7939/R3FS7G
Rights
Permission is hereby granted to the University of Alberta Libraries to reproduce single copies of this thesis and to lend or sell such copies for private, scholarly or scientific research purposes only. Where the thesis is converted to, or otherwise made available in digital form, the University of Alberta will advise potential users of the thesis of these terms. The author reserves all other publication and other rights in association with the copyright in the thesis and, except as herein before provided, neither the thesis nor any substantial portion thereof may be printed or otherwise reproduced in any material form whatsoever without the author's prior written permission.
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