Download the full-sized PDF of Enhancement-mode Polar Sourced Gallium Nitride MOSFETDownload the full-sized PDF



Permanent link (DOI):


Export to: EndNote  |  Zotero  |  Mendeley


This file is in the following communities:

Graduate Studies and Research, Faculty of


This file is in the following collections:

Theses and Dissertations

Enhancement-mode Polar Sourced Gallium Nitride MOSFET Open Access


Other title
Type of item
Degree grantor
University of Alberta
Author or creator
Bothe, Kyle M.
Supervisor and department
Barlage, Douglas (Electrical and Computer Engineering)
Examining committee member and department
Cadien, Kenneth (Chemical and Materials Engineering)
Pramanik, Sandipan (Electrical and Computer Engineering)
Khajehoddin, Ali (Electrical and Computer Engineering)
Ng, Wai Tung (University of Toronto)
Department of Electrical and Computer Engineering
Solid State Electronics
Date accepted
Graduation date
Doctor of Philosophy
Degree level
All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design architecture is the inability to produce an inherently true normally-off device. The more traditional metal-oxide-semiconductor field effect transistor (MOSFET) design has the potential for power efficiency and enhancement-mode device operation. GaN has been touted as the next promising semiconductor for use in high frequency and high power applications. Various potential applications range from low frequency switching solid state transformers to inverters beyond 10 GHz frequency. These devices require high current densities, large breakdown voltages and the ability to operate in high temperature environments. Modern HFET technology has higher off-state leakage current caused from the minimum carrier density under the channel being larger than a conventional depleted GaN MOSFET. This behavior is crucial for high power applications as the off-state power consumption has become one of the essential design parameters. To date, the limiting factors of producing a GaN MOSFET are the fabrication issues associated to essential components within the MOSFET architecture; a high quality gate dielectric and a large concentration of electrons along the source and drain. As power electronic systems desire improved internal power components for next generation circuit designs, the GaN MOSFET has shown great potential over the GaN HFET based on optimized simulations and the demonstration of high quality materials. This work has characterized novel low temperature PEALD gate dielectrics with improved properties on GaN for the potential of improved GaN MOSFET characteristics. Novel ultra-thin PEALD AlN films produced high electron densities along the source and drain regions through low temperature deposition. With the incorporation of these films and conventional commercial fabrication techniques the GaN MOSFET will have a distinct impact on power electronics.
This thesis is made available by the University of Alberta Libraries with permission of the copyright owner solely for the purpose of private, scholarly or scientific research. This thesis, or any portion thereof, may not otherwise be copied or reproduced without the written consent of the copyright owner, except to the extent permitted by Canadian copyright law.
Citation for previous publication

File Details

Date Uploaded
Date Modified
Audit Status
Audits have not yet been run on this file.
File format: pdf (Portable Document Format)
Mime type: application/pdf
File size: 14949001
Last modified: 2016:11:16 14:54:57-07:00
Filename: Bothe_Kyle_M_201504_PhD.pdf
Original checksum: ad84755d7ba34580a2c70e05119be30d
Page count: 146
Activity of users you follow
User Activity Date